Anadigics, Inc. recently announced the Company's proprietary, commercial
process for integrating hetero-junction bipolar transistors (HBTs) with pseudo-morphic
high electron mobility transistors (pHEMTs) on a single indium gallium phosphide
(InGaP) gallium arsenide (GaAs) die. ANADIGICS' HBT/pHEMT process improves
talk-time and ruggedness in several of the Company's leading edge products.
"The convergence of wireless handsets and broadband functionality has
ushered in the era of 3G multimedia mobility," said Dr. Charles Huang,
Executive Vice President and Chief Technical Officer at ANADIGICS. "These
convergence devices require innovative approaches in process technology and
design techniques. ANADIGICS' integrated HBT/pHEMT process provides the
technology leadership and innovation that enables differentiation of our
world-class RFIC solutions in this competitive marketplace."
GaAs circuit designers have can take advantage of the best characteristics of
both bipolar transistors and field effect transistors (FETs) using BiCMOS
technology. With this, Anadigics, Inc., is able to develop and implement into
volume production a commercially viable process for the integration of bipolar
transistors and HBTs on a single GaAs die. ANADIGICS' HBT/pHEMT process results
in greater integration of functionality on a single die, which reduces space
requirements for RFIC designs.
For additional information, contact ANADIGICS by phone (908) 668-5000 or FAX
(908) 668-5132 or visit the Company's Web site at http://www.anadigics.com.