Thu - 21 Feb 2019     
Search
  
Advanced Search
    News Update ...
  
    new cms 2016
  Date:14-05-2016
    Keysight Technologies to host 5G Symposium
  Date:20-08-2015
    Panasonic 45nm chip for HD-AV
  Date:16-09-2007
    European GPS: GIOVE-B arrives at ESTEC for final tests
  Date:11-09-2007
    Verizon Wireless Launches Mobile Phone TV
  Date:04-03-2007




    Most Read News
  
   
  Date:17-05-2005
    Verizon Wireless Launches Mobile Phone TV
  Date:04-03-2007
    ElvaLink Announces Gigabit Ethernet Mm-wave Links (1.25Gbpst Full-Duplex Radio Link).
  Date:23-03-2005
    RADOX® RailCat data bus cable from HUBER+SUHNER
  Date:08-08-2006
    CSR's open architecture BlueCore for Bluetooth.
  Date:16-02-2006




    Featured News
 
    new cms 2016
  Date:14-05-2016
    Keysight Technologies to host 5G Symposium
  Date:20-08-2015
    Verizon Wireless Launches Mobile Phone TV
  Date:04-03-2007
   
  Date:17-05-2005


Bookmark and Share Edit News
    Integration of HBTs and pHEMTs on Single InGaP GaAs Die by Anadigics


Anadigics, Inc. recently announced the Company's proprietary, commercial process for integrating hetero-junction bipolar transistors (HBTs) with pseudo-morphic high electron mobility transistors (pHEMTs) on a single indium gallium phosphide (InGaP) gallium arsenide (GaAs) die. ANADIGICS' HBT/pHEMT process improves talk-time and ruggedness in several of the Company's leading edge products.

"The convergence of wireless handsets and broadband functionality has ushered in the era of 3G multimedia mobility," said Dr. Charles Huang, Executive Vice President and Chief Technical Officer at ANADIGICS. "These convergence devices require innovative approaches in process technology and design techniques. ANADIGICS' integrated HBT/pHEMT process provides the technology leadership and innovation that enables differentiation of our world-class RFIC solutions in this competitive marketplace."

GaAs circuit designers have can take advantage of the best characteristics of both bipolar transistors and field effect transistors (FETs) using BiCMOS technology. With this, Anadigics, Inc., is able to develop and implement into volume production a commercially viable process for the integration of bipolar transistors and HBTs on a single GaAs die. ANADIGICS' HBT/pHEMT process results in greater integration of functionality on a single die, which reduces space requirements for RFIC designs.

For additional information, contact ANADIGICS by phone (908) 668-5000 or FAX (908) 668-5132 or visit the Company's Web site at http://www.anadigics.com.

    Submitted By: rfdesign.info news team Date: 2005-06-03
This page has been viewed for 1168 times
Back
Please enter your email address to receive our newsletters:

Unsubscribe?



Most Viewed News
 
 Programmable System-on-Chip (PSoC) with Integrated Full-Speed USB: Cypress
 
 160-Gb/s, 16-Channel Full-Duplex, Single-Chip CMOS Optical Transceiver
 200GB And 250GB Parallel And SERIAL ATA With 3.0GB Per Second Hard Disk Drives
 
 
Most Viewed Documents
 CDMA technology basics
 OFDM synchronization
 OFDM Basics Tutorial
 Operational Amplifier / Op Amp Basics
 Non-inverting operational amplifier circuit
 
 
Most Viewed Products
 
 

  Privacy Policy

  Disclaimer

Copyright 2003-2018 rfdesign.info  

Website design by anandsoft.com