Mimix Broadband, Inc. introduced earlier this month, a new line of Ka-band
gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) products.
The products include power amplifiers and a frequency doubler, covering 27 to 34
GHz frequency bands, with the 30SPA0536 device achieving 36 dBm Psat. Power
Amplifiers Achieve 1, 2 and 4-watts Psat; Use Doubler with Amplifiers to
Simplify System Design Using 0.15 micron gate length GaAs pHEMT device model
technology, the new power amplifiers and doubler achieve the following
performance levels:
Part#30SPA0536
- Frequency (GHz):27.0-33.0
- Gain (db):21 +/- 1.0
- Output Psat (dBm):36
- Bias (mA@V):2.1 A @ 5.0
Part#:30MPA0562
- Frequency (GHz):28.0-31.0
- Gain (db):27+/- 1.0
- Output Psat (dBm):30
- Bias (mA@V):420 @ 5.0
Part# 30SPA0557
- Frequency: 27.0-32.0
- Gain (db): 21 +/- 1.0
- Output Psat: 34
- Bias (mA@V):1.1 A @ 5.0
Part #30DBL0537
- RF In (GHz):14.5-17.0
- RF Out (GHz): 29.0-34.0
- Pin (dBm):2
- Pout (dBm):20
- Bias (mA@V):190@5.0
The 30DBL0537 used in conjunction with the 30SPA0536 provides a highly
integrated uplinks for commercial and defense applications, eliminating the need
for a more complex heterodyne up-converter system design. The new amplifiers and
doublers are well suited for wireless communications applications, such as
millimeter-wave point-to-point radio, LMDS, Satcom and VSAT applications.
“These parts provide ‘state-of-the-art’ power levels at the Ka-band
frequencies used for satellite uplinks, with good PAE and match, and
exceptionally good lifetime, in 4-mil substrate thickness that facilitates
handling at the die level,” stated Dr. Jim Harvey, CTO of Mimix Broadband,
Inc. “In addition to providing these parts as die, Mimix is developing a range
of packaged versions to facilitate low cost manufacture of Ka-band
up-converters.”
Mimix performs 100% on-wafer RF, DC and output power testing on these products,
as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also
have surface passivation to protect and provide rugged parts with backside via
holes and gold metallization to allow either a conductive epoxy or eutectic
solder die attach process.