Mimix Broadband, Inc. announced recently the introduction of gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) sub-harmonically pumped receiver and transmitter devices. The devices integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier and a low noise amplifier for the receiver, and an output amplifier for the transmitter. The image reject mixer eliminates the need for an image bandpass filter after the amplifier. Using 0.15 micron gate length GaAs pHEMT device model technology, these devices cover the 18 to 25 GHz frequency bands. The receiver has a noise figure of 2.5 dB and 15 dB image rejection across the band. The transmitter has a +20 dBm output third order intercept point (OIP3) and 15 dB image rejection across the band.

This receiver (XR1006) and transmitter (XU1002) pair, are well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

"These highly integrated parts significantly lower the millimeter-wave chip count in microwave radios," stated Dr. Jim Harvey, CTO of Mimix Broadband, Inc. "Each part replaces three or four separate functions, improving manufacturability and lowering assembly and parts cost, and they are important additions to the Mimix 3-Chip Solution."

Mimix performs 100% on-wafer RF and DC on these products, as well as 100% visual inspection to MIL-STD-883 method 2010. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave wireless communications applications. For details, please contact 281.988.4600 or visit www.mimixbroadband.com.